Boron doped graphene nanoribbons
نویسندگان
چکیده
Submitted for the MAR07 Meeting of The American Physical Society Boron doped graphene nanoribbons THIAGO MARTINS, Instituto de Fisica Universidade de Sao Paulo, HIROKI MIWA, Instituto de Fisica, Universidade Federal de Uberlandia, ANTONIO J.R. DA SILVA, A. FAZZIO, Instituto de Fisica Universidade de Sao Paulo — We will present a detailed study of the electronic, magnetic and transport properties of boron doped graphene nanoribbons, for various widths. The electronic structures and the equilibrium geometries were obtained through ab initio total energy DFT calculations. The transport properties were investigated using nonequilibrium Green’s functions. Our results reveal that the substitutional boron atoms occupy the edge sites of nanoribbons, quenching the local ferromagnetism along the nanorribon edges. In addition, the presence of edge boron atoms break the symmetry between spin up and spin down transmittance channels. Those results suggest that, through a suitable doping process, it is possible to tailor the electronic current along the graphene nanoribbon. We thank FAPESP, CNPq and CENAPAD-SP. Thiago Martins Instituto de Fisica Universidade de Sao Paulo Date submitted: 15 Dec 2006 Electronic form version 1.4
منابع مشابه
New insight into the enhanced visible light photocatalytic activity over boron-doped reduced graphene oxide.
Boron-doped reduced graphene oxide (B-RGO) synthesized by a facile one-step reflux route is able to exhibit significantly higher photocatalytic activity than non-doped RGO under visible light irradiation. New insights accounting for this photocatalytic activity improvement are discussed, which is distinctly different from the case of B-RGO nanoribbons under UV light irradiation.
متن کاملChemically induced mobility gaps in graphene nanoribbons: a route for upscaling device performances.
We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasi-bound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-base...
متن کاملRectification in Graphene Self-Switching Nanodiode Using Side Gates Doping
The electrical properties and rectification behavior of the graphene self-switching diodes by side gates doping with nitrogen and boron atoms were investigated using density functional tight-binding method. The devices gates doping changes the electrical conductivity of the side gates and the semiconductor channel nanoribbons. As a result, the threshold voltage value under the forward bias is s...
متن کاملResonance of graphene nanoribbons doped with nitrogen and boron: a molecular dynamics study
Based on its enticing properties, graphene has been envisioned with applications in the area of electronics, photonics, sensors, bio-applications and others. To facilitate various applications, doping has been frequently used to manipulate the properties of graphene. Despite a number of studies conducted on doped graphene regarding its electrical and chemical properties, the impact of doping on...
متن کاملFlower-like TiO2 nanosructures with exposed {001} facets: Facile synthesis and enhanced photocatalysis
Carbon nanotubes, carbon nanocones, and graphene nanoribbons are carbon-based nanomaterials, and their electronic and field emission properties can be altered by either electron donors or electron acceptors. Among both donors and accepters, nitrogen and boron atoms are typical substitutional dopants for carbon materials. The contribution of this paper mainly provides a comprehensive overview of...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012